AbstractFor InAs/GaAs quantum dot system. the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS). Two transitions related to the heavy- and light-hole in the WL have been distinguished in RD spectra. Taking into account the strain and segregation effects. https://www.ealisboa.com/great-deal-Pentair-Union-Collar-2-U11-200PS-super-offer/